A 23-GHz low-noise amplifier in SiGe heterojunction bipolar technology

被引：8

作者：

Schuppener, G ^{[1
]}

Harada, T ^{[1
]}

Li, YG ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, FMI, S-16440 Kista, Sweden

来源：

2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年

关键词：

D O I：

10.1109/RFIC.2001.935670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic low-noise amplifier for operation in the 23-GHz band is presented The circuit has been designed utilizing an advanced 0.2-micron SiGe heterojunction bipolar technology, featuring npn transistors with f(T) and f(max) of about 90- and 100-GHz, respectively. Measurements show a gain of 21-dB and noise figure of 4.1-dB at 23-GHz, which compare reasonably well with simulated results. The circuit consumes 20-mA from a 2.5-V single supply. To our knowledge, 23 GHz band is the highest operation frequency reported so far for LNA in SiGe technology.

引用

页码：177 / 180

页数：4

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