A 23-GHz low-noise amplifier in SiGe heterojunction bipolar technology

被引：8
|
作者：
Schuppener, G [1 ]
Harada, T [1 ]
Li, YG [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, FMI, S-16440 Kista, Sweden
来源：
2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年
关键词：
D O I：
10.1109/RFIC.2001.935670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic low-noise amplifier for operation in the 23-GHz band is presented The circuit has been designed utilizing an advanced 0.2-micron SiGe heterojunction bipolar technology, featuring npn transistors with f(T) and f(max) of about 90- and 100-GHz, respectively. Measurements show a gain of 21-dB and noise figure of 4.1-dB at 23-GHz, which compare reasonably well with simulated results. The circuit consumes 20-mA from a 2.5-V single supply. To our knowledge, 23 GHz band is the highest operation frequency reported so far for LNA in SiGe technology.
引用
收藏
页码：177 / 180
页数：4
相关论文
共 50 条
  • [21] A 1.8 GHz CMOS low-noise amplifier
    Debono, CJ
    Maloberti, F
    Micallef, J
    ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS, 2001, : 1111 - 1114
  • [22] Ultra-wideband SiGe low-noise amplifier
    Shi, B.
    Chia, Y. W.
    ELECTRONICS LETTERS, 2006, 42 (08) : 462 - 463
  • [23] A DC-4 GHz 270Ω Differential SiGe Low-Noise Amplifier for Cryogenic Applications
    Bardin, Joseph C.
    Weinreb, Sander
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 186 - 189
  • [24] Design of an Inductor less 3-10GHz SiGe HBT Low-Noise Amplifier
    Huang, Yi-wen
    Zhang, Wan-rong
    Shen, Pei
    Hu, Ning
    Huang, Lu
    2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2009, : 258 - 261
  • [25] 2 to 23 GHz BiFET low noise amplifier design flow and implementations in 0.25 μm SiGe BiCMOS technology
    Thierry Taris
    Cristian Pavão Moreira
    Nicolas Seller
    Jean-Baptiste Begueret
    Eric Kerhervé
    Yann Deval
    Pierre Jarry
    Didier Belot
    Analog Integrated Circuits and Signal Processing, 2008, 55 : 59 - 68
  • [26] An RF low-noise broadband amplifier processed in 0.35um SiGe technology
    Liu, LC
    Zhang, ZF
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2144 - 2147
  • [27] A 4.4 to 5 GHz SiGe low noise amplifier
    Crippa, P
    Orcioni, S
    Ricciardi, F
    Turchetti, C
    APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 429 - 433
  • [28] A Broadband Low-Noise Amplifier for D-Band Communications in SiGe BiCMOS Technology
    Ali, Mohammed K.
    Panic, Goran
    Kissinger, Dietmar
    PROCEEDINGS OF THE 2022 14TH GERMAN MICROWAVE CONFERENCE (GEMIC), 2022, : 92 - 95
  • [29] A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology
    Gadallah, Ahmed
    Eissa, Mohamed Hussein
    Mausolf, Thomas
    Kissinger, Dietmar
    Malignaggi, Andrea
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (04) : 331 - 334
  • [30] A 4mA, 0.25 SiGe, 23GHz BiFET low noise amplifier
    Taris, T.
    Seller, N.
    Toupe, R.
    Lapuyade, H.
    Begueret, J. -B.
    Deval, Y.
    2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3, 2006, : 1019 - 1022
12345