Design of a SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband radio

被引：0
|
作者：
Shi, B [1 ]
Shi, M [1 ]
Chia, YW [1 ]
机构：
[1] Inst Infocomm Res, Singapore 117674, Singapore
来源：
2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a low-noise amplifier (LNA) targeted for ultra-wideband (UWB) applications. The design consists of two gain stages in multiple feedback loops to achieve broadband gain together with low noise figure and good input impedance match. Implemented with a 0.25mum SiGe BiCMOS process and housed in a standard LPCC package, the LNA chip gives 18.5 dB gain and 10.3GHz -3 dB bandwidth (2.7-13 GHz) while consuming less than 19 mW of dc power through a 3 V supply. Over the 3.1-10.6 GHz UWB frequency band allocated by the FCC, noise figure of 2.1-3.3 dB and input return loss greater than 12.5dB have been achieved.
引用
收藏
页码：101 / 104
页数：4
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