Design of a SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband radio

被引：0

作者：

Shi, B ^{[1
]}

Shi, M ^{[1
]}

Chia, YW ^{[1
]}

机构：

[1] Inst Infocomm Res, Singapore 117674, Singapore

来源：

2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a low-noise amplifier (LNA) targeted for ultra-wideband (UWB) applications. The design consists of two gain stages in multiple feedback loops to achieve broadband gain together with low noise figure and good input impedance match. Implemented with a 0.25mum SiGe BiCMOS process and housed in a standard LPCC package, the LNA chip gives 18.5 dB gain and 10.3GHz -3 dB bandwidth (2.7-13 GHz) while consuming less than 19 mW of dc power through a 3 V supply. Over the 3.1-10.6 GHz UWB frequency band allocated by the FCC, noise figure of 2.1-3.3 dB and input return loss greater than 12.5dB have been achieved.

引用

页码：101 / 104

页数：4

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