A low noise 3.1-10.6 GHz pMOS distributed amplifier for ultrawideband applications

被引：1
|
作者：
Wei, Chien-Cheng [1 ]
Chiu, Hsien-Chin [1 ]
Feng, Wu-Shiung [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2007年 / 49卷 / 07期
关键词：
UWB; CMOS; distributed amplifier;
D O I：
10.1002/mop.22532
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low noise pMOS distributed amplifier for Ultra-wideband (UWB) application is presented in this study. The amplifier is a two-stage design fabricated in a standard 0.18-mu m CMOS process. The pMOS-based distributed amplifier as input stage is used to achieve a better noise figure and a wider bandwidth; besides, the nMOS common-source amplifier as output stage is applied to obtain sufficient gain over the band, respectively. The fully amplifier exhibits a power gain of 9 dB with a gain flatness of 0.8 dB, and noise figures are approximately lower than 5.3 dB from 3.1 to 10. 6 GHz. The 1-dB compression point and input third-order intercept points are -8 dBm and 3.5 dBm with total power consumption of 22.5 mW, respectively. Experimental results indicate that the proposed architecture exhibits low noise and high gain,formance for UWB applications. (C) 2007 Wiley Periodicals, Inc.
引用
收藏
页码：1641 / 1644
页数：4
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