A microwave cryogenic low-noise amplifier based on sige heterostructures

被引：0
|
作者：
B. I. Ivanov
M. Grajcar
I. L. Novikov
A. G. Vostretsov
E. Il’ichev
机构：
[1] Novosibirsk State Technical University,Department of Experimental Physics
[2] Comenius University,Institute of Physics
[3] Slovak Academy of Science,undefined
[4] Leibniz Institute of Photonic Technology,undefined
来源：
Technical Physics Letters | 2016年 / 42卷
关键词：
Technical Physic Letter; Gain Factor; Microwave Theory Tech; Input Power Level; Superconducting Qubit;
D O I：
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中图分类号：
学科分类号：
摘要：
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
引用
收藏
页码：380 / 383
页数：3
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