A wideband cryogenic microwave low-noise amplifier

被引：4

作者：

Ivanov, Boris I. ^{[1
]}

Volkhin, Dmitri, I ^{[1
]}

Novikov, Ilya L. ^{[1
]}

Pitsun, Dmitri K. ^{[1
]}

Moskalev, Dmitri O. ^{[2
,3
]}

Rodionov, Ilya A. ^{[2
,3
]}

Il'ichev, Evgeni ^{[1
,4
]}

Vostretsov, Aleksey G. ^{[1
]}

机构：

[1] Novosibirsk State Tech Univ, K Marx Av 20, Novosibirsk 630073, Russia

[2] Bauman Moscow State Tech Univ, FMN Lab, 2 Nd Baumanskaya Str 5, Moscow 105005, Russia

[3] Dukhov Automat Res Inst VNIIA, 22 Ul Sushchevskaya, Moscow 127055, Russia

[4] Leibniz Inst Photon Technol, POB 100239, D-07702 Jena, Germany

来源：

BEILSTEIN JOURNAL OF NANOTECHNOLOGY | 2020年 / 11卷

关键词：

cryogenic low-noise amplifier; high-electron-mobility transistor (HEMT); HEMT amplifier; microwave cryogenic amplifier; microwave superconducting circuit readout; superconducting qubit readout; SUPERCONDUCTING FLUX QUBIT;

D O I：

10.3762/bjnano.11.131

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

引用

页码：1484 / 1491

页数：8

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