Ka-band low-noise cryogenic amplifier

被引：0
|
作者：
Krasnov, VV
Minnebaev, VM
机构：
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2004年 / 49卷 / 01期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of designing and manufacturing Ka-band low-noise cooled amplifiers based on discrete field-effect transistors (FETs) and monolithic ICs are presented. The microwave parameters of these amplifiers and the reliability and reproducibility of the devices employing these amplifies are compared.
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页码：106 / 112
页数：7
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