Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors

被引：3

作者：

Maegawa, Yosuke ^{[1
]}

Koba, Shunsuke ^{[1
]}

Tsuchiya, Hideaki ^{[1
,2
]}

Ogawa, Matsuto ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 08期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; SIMULATION; SI;

D O I：

10.1143/APEX.4.084301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III-V channel metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron-electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III-V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[21] Structural Dependence of Source-and-Drain Series Resistance on Saturation Drain Current for Sub-20 nm Metal-Oxide-Semiconductor Field-Effect Transistors
Yoon, JongChul
Hiroki, Akira
Kobayashi, Kazutoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (07)
[22] Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using an embedded TiN-source/drain structure
Nagatomi, Y.
Tateyama, T.
Tanaka, S.
Yamamoto, K.
Wang, D.
Nakashima, H.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (03)
[23] INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
SEQUIN, C
BALDINGER, E
SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1527 - +
[24] On the threshold voltage of metal-oxide-semiconductor field-effect transistors
Shi, XJ
Wong, M
SOLID-STATE ELECTRONICS, 2005, 49 (07) : 1179 - 1184
[25] Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors
Sugii, N
Yamaguchi, S
Nakagawa, K
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (03) : 155 - 159
[26] Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors
Omura, Y
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1378 - 1384
[27] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Yang, Ji-Woon
Park, Chang Seo
Smith, Casey E.
Adhikari, Hemant
Huang, Jeff
Heh, Dawei
Majhi, Prashant
Jammy, Raj
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[28] Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
不详
不详
Jpn. J. Appl. Phys., 4 PART 2
[29] Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors. Raised Source/Drain with In situ Doping for Series Resistance Reduction
Gong, Xiao
Chin, Hock-Chun
Koh, Shao-Ming
Wang, Lanxiang
Ivana
Zhu, Zhu
Wang, Benzhong
Chia, Ching Kean
Yeo, Yee-Chia
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[30] Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors
Fujiwara, A
Takahashi, Y
Namatsu, H
Kurihara, K
Murase, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A): : 3257 - 3263

← 1 2 3 4 5 →