Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors

被引：3

作者：

Maegawa, Yosuke ^{[1
]}

Koba, Shunsuke ^{[1
]}

Tsuchiya, Hideaki ^{[1
,2
]}

Ogawa, Matsuto ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 08期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; SIMULATION; SI;

D O I：

10.1143/APEX.4.084301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III-V channel metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron-electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III-V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
Yokoyama, Masafumi
Yasuda, Tetsuji
Takagi, Hideki
Yamada, Hisashi
Fukuhara, Noboru
Hata, Masahiko
Sugiyama, Masakazu
Nakano, Yoshiaki
Takenaka, Mitsuru
Takagi, Shinichi
APPLIED PHYSICS EXPRESS, 2009, 2 (12)
[42] Higher-Order Effect of Source-Drain Series Resistance on Saturation Drain Current in Sub-20nm Metal-Oxide-Semiconductor Field-Effect Transistors
Yoon, JongChul
Hiroki, Akira
Kobayashi, Kazutoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
[43] Primary Factor Extracted for Anomalous Decline of Drain Current in Metal-Oxide-Semiconductor Field-Effect Transistors
Abe, Kazuhide
Sasaki, Tadahiro
Itaya, Kazuhiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
[44] Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors
Yokoyama, Masafumi
Nishi, Koichi
Kim, Sanghyeon
Yokoyama, Haruki
Takenaka, Mitsuru
Takagi, Shinichi
APPLIED PHYSICS LETTERS, 2014, 104 (09)
[45] Influence of doping gradient near a channel end on parasitic series resistance of thin-film fully-depleted metal-oxide-semiconductor field-effect transistors
Sato, Y., 1600, Japan Society of Applied Physics (43):
[46] Influence of doping gradient near a channel end on parasitic series resistance of thin-film fully-depleted metal-oxide-semiconductor field-effect transistors
Sato, Y
Tsuchiya, T
Kado, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (10): : 6948 - 6956
[47] Metal-oxide-semiconductor field-effect transistor with a vacuum channel
Srisonphan, Siwapon
Jung, Yun Suk
Kim, Hong Koo
NATURE NANOTECHNOLOGY, 2012, 7 (08) : 504 - 508
[48] Effect of magnetic field on random telegraph noise in the source current of p-channel metal-oxide-semiconductor field-effect transistors
Baron, FA
Zhang, YH
Bao, MQ
Li, RG
Li, JM
Wang, KL
APPLIED PHYSICS LETTERS, 2003, 83 (04) : 710 - 712
[49] Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
Low, T
Li, MF
Yeo, YC
Fan, WJ
Ng, ST
Kwong, DL
JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
[50] III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
Yokoyama, Masafumi
Kim, Sanghyeon
Zhang, Rui
Taoka, Noriyuki
Urabe, Yuji
Maeda, Tatsuro
Takagi, Hideki
Yasuda, Tetsuji
Yamada, Hisashi
Ichikawa, Osamu
Fukuhara, Noboru
Hata, Masahiko
Sugiyama, Masakazu
Nakano, Yoshiaki
Takenaka, Mitsuru
Takagi, Shinichi
APPLIED PHYSICS EXPRESS, 2012, 5 (07)

← 1 2 3 4 5 →