Nd-doped Bismuth Titanate Based Ferroelectric Field Effect Transistor: Design, Fabrication, and Optimization

被引：0
|
作者：
Feng, Tingting [1 ]
Xie, Dan [1 ,4 ]
Zang, Yongyuan [2 ]
Wu, Xaio [1 ]
Luo, Yafeng [1 ]
Ren, Tianling [1 ]
Bosund, Markus [3 ]
Li, Shuo [3 ]
Airaksinen, Veli-Matti [3 ]
Lipsanen, Harri [3 ]
Honkanen, Seppo [3 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol TNList, Beijing 100084, Peoples R China
[2] McGill Univ, Elect & Comp Engn, Montreal, PQ H3A 2T8, Canada
[3] Aalto Univ, Sch Sci & Technol, Dept Micro & Nanosci, Espoo, Finland
[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integreted Dev, Chengdu 610054, Peoples R China
来源：
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：2
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