Field-effect transistor memories based on ferroelectric polymers

被引：0

作者：

Yujia Zhang ^{[1
]}

Haiyang Wang ^{[1
]}

Lei Zhang ^{[1
]}

Xiaomeng Chen ^{[1
]}

Yu Guo ^{[1
]}

Huabin Sun ^{[1
]}

Yun Li ^{[1
]}

机构：

[1] School of Electronic Science and Engineering,National Laboratory of Solid-State Microstructures,Collaborative Innovation Center of Advanced Microstructures

来源：

Journal of Semiconductors | 2017年 / 11期

关键词：

ferroelectric polymers; field-effect transistor memories; ferroelectricity;

D O I：

暂无

中图分类号：

TN386 [场效应器件]; TP333 [存贮器];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 081201 ;

摘要：

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors(Fe-FETs) in non-volatile memory applications.

引用

页码：5 / 18

页数：14

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