P-type doping in GaN through be implantation

被引：2
|
作者：
Feng, ZC [1 ]
Sun, YJ [1 ]
Tan, LS [1 ]
Chua, SJ [1 ]
Yu, JW [1 ]
Yang, CC [1 ]
Lu, W [1 ]
Collins, WE [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan
来源：
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期
关键词：
D O I：
10.1002/pssc.200461458
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed.
引用
收藏
页码：2415 / 2419
页数：5
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