P-type doping in GaN through be implantation

被引：2

作者：

Feng, ZC ^{[1
]}

Sun, YJ ^{[1
]}

Tan, LS ^{[1
]}

Chua, SJ ^{[1
]}

Yu, JW ^{[1
]}

Yang, CC ^{[1
]}

Lu, W ^{[1
]}

Collins, WE ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461458

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed.

引用

页码：2415 / 2419

页数：5

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