P-type doping in GaN through be implantation

被引：2

作者：

Feng, ZC ^{[1
]}

Sun, YJ ^{[1
]}

Tan, LS ^{[1
]}

Chua, SJ ^{[1
]}

Yu, JW ^{[1
]}

Yang, CC ^{[1
]}

Lu, W ^{[1
]}

Collins, WE ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461458

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed.

引用

页码：2415 / 2419

页数：5

共 50 条

[41] p-type doping of CdTe
Valdna, V
SOLID STATE PHENOMENA, 1999, 67-8 : 309 - 314
[42] In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers
An, Myung Hwan
Chung, Ho-Yong
Chung, Sang-Jo
KOREAN JOURNAL OF MATERIALS RESEARCH, 2008, 18 (08): : 450 - 453
[43] Growth of p-type GaN – The role of oxygen in activation of Mg-doping
Kumar A.
Berg M.
Wang Q.
Salter M.
Ramvall P.
Power Electronic Devices and Components, 2023, 5
[44] The feasibility of tunable p-type Mg doping in a GaN monolayer nano sheet
Xia, Congxin
Peng, Yuting
Wei, Shuyi
Jia, Yu
ACTA MATERIALIA, 2013, 61 (20) : 7720 - 7725
[45] Co-doping characteristics of Si and Zn with Mg in P-type GaN
Kim, KS
Oh, CS
Han, MS
Kim, CS
Yang, GM
Yang, JW
Hong, CH
Youn, CJ
Lim, KY
Lee, HJ
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
[46] Influence of the p-type doping concentration on reflection-mode GaN photocathode
Wang, Xiaohui
Chang, Benkang
Ren, Ling
Gao, Pin
APPLIED PHYSICS LETTERS, 2011, 98 (08)
[47] Highly effective p-type doping of diamond by MeV ion implantation of boron
Vogel, T
Meijer, J
Zaitsev, A
DIAMOND AND RELATED MATERIALS, 2004, 13 (10) : 1822 - 1825
[48] p-type doping of SiC by high dose Al implantation - Problems and progress
Heera, V
Panknin, D
Skorupa, W
APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 307 - 316
[49] p-type doping of Ge by Al ion implantation and pulsed laser melting
Milazzo, R.
Linser, M.
Impellizzeri, G.
Scarpa, D.
Giarola, M.
Sanson, A.
Mariotto, G.
Andrighetto, A.
Carnera, A.
Napolitani, E.
APPLIED SURFACE SCIENCE, 2020, 509
[50] p- and n-type implantation doping of GaN with Ca and O
Zolper, JC
Wilson, RG
Pearton, SJ
Stall, RA
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 189 - 194

← 1 2 3 4 5 →