A new memory effect (MSD) in fully depleted SOI MOSFETs

被引：38

作者：

Bawedin, M

Cristoloveanu, S

Yun, JG

Flandre, D

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] ENSERG, UMR CNRS, INPJ, UJF,IMEP, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 09期

关键词：

floating body effect; memory effect; hysteresis; fully depleted; silicon-on-insulator (SOI); MOSFET;

D O I：

10.1016/j.sse.2005.07.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that the transconductance and drain current of fully depleted MOSFETs can display an interesting time-dependent hysteresis. This new memory effect, called meta-stable dip (MSD), is mainly due to the long carrier generation lifetime in the silicon film. Our parametric analysis shows that the memory window can be adjusted in view of practical applications. Various measurement conditions and devices with different doping, front oxide and silicon film thicknesses are systematically explored. The MSD effect can be generalized to several fully depleted CMOS technologies. The MSD mechanism is discussed and validated by two-dimensional simulations results. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1547 / 1555

页数：9

共 50 条

[41] Optimized nickel silicide technology for fully depleted nano-scale SOI MOSFETs
Yun, J. G.
Oh, S. Y.
Kim, Y. J.
Lee, W. J.
Wang, T.
Tuya, A.
Ji, H. H.
Han, I. S.
Wang, J. S.
Lee, H. D.
2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 765 - 768
[42] Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs
Marquez, Carlos
Rodriguez, Noel
Gamiz, Francisco
Ohata, Akiko
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) : 5093 - 5098
[43] DETAILED CHARACTERIZATION AND ANALYSIS OF THE BREAKDOWN VOLTAGE IN FULLY DEPLETED SOI N-MOSFETS
KISTLER, N
WOO, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1217 - 1221
[44] Salicide process for 400Å fully-depleted SOI-MOSFETs using NiSi
Deng, F
Johnson, RA
Dubbelday, WB
Garcia, GA
Asbeck, PM
Lau, SS
1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 22 - 23
[45] Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process
Karsenty, Avi
Chelly, Avraham
ACTIVE AND PASSIVE ELECTRONIC COMPONENTS, 2015, 2015
[46] Temperature dependence of drain-induced-barrier lowering in fully depleted SOI MOSFETs
Jomaah, J
Ghibaudo, G
Pelloie, JL
Balestra, F
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 287 - 291
[47] High Performance and Low Variability Fully-Depleted Strained-SOI MOSFETs
Mazurier, J.
Weber, O.
Andrieu, F.
Allain, F.
Tabone, C.
Toffoli, A.
Fenouillet-Beranger, C.
Brevard, L.
Tosti, L.
Perreau, P.
Belleville, M.
Faynot, O.
2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
[48] Impact of WSix metal gate stoichiometry on fully depleted SOI MOSFETs electrical properties
Widiez, J.
Vinet, M.
Guillaumot, B.
Garros, X.
Minoret, S.
Poiroux, T.
Weber, O.
Thevenod, L.
Holliger, P.
Previtali, B.
Barral, V.
Ali, K. Sidi
Grosgeorges, Cherif P.
Toffoli, A.
Maitrejean, S.
Casse, M.
Martin, F.
Lafond, D.
Faynot, O.
Mouis, M.
Deleonibus, S.
2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 117 - +
[49] Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs
Zhang, M.
Knoch, J.
Zhao, Q. T.
Breuer, U.
Mantl, S.
SOLID-STATE ELECTRONICS, 2006, 50 (04) : 594 - 600
[50] HOT-CARRIER EFFECTS IN THIN-FILM FULLY DEPLETED SOI MOSFETS
MA, ZJ
WANN, HJ
CHAN, M
KING, JC
CHENG, YC
KO, PK
HU, C
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (06) : 218 - 220

← 1 2 3 4 5 →