A new memory effect (MSD) in fully depleted SOI MOSFETs

被引：38
|
作者：
Bawedin, M
Cristoloveanu, S
Yun, JG
Flandre, D
机构：
[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium
[2] ENSERG, UMR CNRS, INPJ, UJF,IMEP, F-38016 Grenoble, France
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 09期
关键词：
floating body effect; memory effect; hysteresis; fully depleted; silicon-on-insulator (SOI); MOSFET;
D O I：
10.1016/j.sse.2005.07.019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate that the transconductance and drain current of fully depleted MOSFETs can display an interesting time-dependent hysteresis. This new memory effect, called meta-stable dip (MSD), is mainly due to the long carrier generation lifetime in the silicon film. Our parametric analysis shows that the memory window can be adjusted in view of practical applications. Various measurement conditions and devices with different doping, front oxide and silicon film thicknesses are systematically explored. The MSD effect can be generalized to several fully depleted CMOS technologies. The MSD mechanism is discussed and validated by two-dimensional simulations results. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1547 / 1555
页数：9
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