Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances

被引：1
|
作者：
Gerardi, C. [1 ]
Tripiciano, E.
Cina, G.
Lombardo, S. [2 ]
Garozzo, C. [2 ]
Corso, D. [2 ]
Betro, G. [3 ]
Pace, C. [3 ]
Crupi, F. [3 ]
机构：
[1] Numonyx, Technol Transfer, I-95121 Catania, Italy
[2] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy
[3] Univ Calabria, Dipartimento Elettron Informat & Sistemist, I-87036 Arcavacata Di Rende, CS, Italy
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 11期
关键词：
Non-volatile memories; SONOS memories; TANOS memories; 3D memory cell; finFET; Multiple-gate transistor;
D O I：
10.1016/j.sse.2010.06.023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1319 / 1325
页数：7
相关论文
共 50 条
12345