HYDROGENATION OF BORON ACCEPTOR IN SILICON DURING ELECTRON INJECTION BY FOWLER-NORDHEIM TUNNELING

被引：8

|

作者：

CHAO, CYP

LUO, MSC

PAN, SCS

SAH, CT

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.97654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：180 / 181

页数：2

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