FOWLER-NORDHEIM TUNNELING IN IMPLANTED MOS DEVICES

被引：20
|
作者：
WOLTERS, DR
PEEK, HL
机构：
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期
关键词：
D O I：
10.1016/0038-1101(87)90009-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：835 / 839
页数：5
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