DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION

被引:21
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作者
BALLAND, B
PLOSSU, C
BARDY, S
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D O I
10.1016/0040-6090(87)90153-2
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T [工业技术];
学科分类号
08 ;
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页码:149 / 162
页数:14
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