Beryllium doped low-temperature-grown MBE GaAs:: material for photomixing in the THz frequency range

被引：0

作者：

Darmo, J ^{[1
]}

Schäffer, F ^{[1
]}

Förster, A ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Max Planck Inst Radioastron, D-53010 Bonn, Germany

来源：

ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ASDAM.2000.889470

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Several topics related to the performances of a photoconductive mixer based oil low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure am discussed Relevant experimental data obtained for BE-doped GaAs are presented.

引用

页码：147 / 150

页数：4

共 50 条

[21] Low-temperature MBE grown GaAs for pulsed THz radiation applications
Adomavicius, R
Balakauskas, S
Bertulis, K
Geizutis, A
Molis, G
Krotkus, A
ACTA PHYSICA POLONICA A, 2005, 107 (01) : 128 - 131
[22] COMPENSATION IN MBE-GROWN GAAS DOPED WITH SILICON AND BERYLLIUM
MOHADESKASSAI, A
BROZEL, MR
MURRAY, R
NEWMAN, RC
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 471 - 476
[23] Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE
Chen, XY
Koenraad, P
Hooge, FN
Wolter, JH
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 457 - 460
[24] Application of liftoff low-temperature-grown GaAs on transparent substrates for THz signal generation
Heiliger, HM
Vosseburger, M
Roskos, HG
Kurz, H
Hey, R
Ploog, K
APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2903 - 2905
[25] ROLE OF EXCESS AS IN LOW-TEMPERATURE-GROWN GAAS
WARREN, AC
WOODALL, JM
KIRCHNER, PD
YIN, X
POLLAK, F
MELLOCH, MR
OTSUKA, N
MAHALINGAM, K
PHYSICAL REVIEW B, 1992, 46 (08): : 4617 - 4620
[26] The behavior of As precipitates in low-temperature-grown GaAs
Bourgoin, JC
Khirouni, K
Stellmacher, M
APPLIED PHYSICS LETTERS, 1998, 72 (04) : 442 - 444
[27] FERMI-LEVEL OF LOW-TEMPERATURE-GROWN GAAS ON SI-DELTA-DOPED GAAS
HSU, TM
LEE, WC
WU, JR
CHYI, JI
PHYSICAL REVIEW B, 1995, 51 (23): : 17215 - 17218
[28] THz Generation Characteristics of Low-temperature-grown InGaAs Emitters
Kim, J. O.
Lee, S. J.
Yee, D. S.
Noh, S. K.
Shin, J. H.
Park, K. H.
Kang, C.
Kee, C. -S.
Park, D. W.
Kim, J. S.
Kim, J. S.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (05) : 1334 - 1338
[29] Low-Temperature-Grown GaAs Photoconductor with High Dynamic Responsivity in the Millimeter Wave Range
Peytavit, Emilien
Coinon, Christophe
Lampin, Jean-Francois
APPLIED PHYSICS EXPRESS, 2011, 4 (10)
[30] Native point defects in low-temperature-grown GaAs
Appl Phys Lett, 2 (279):

← 1 2 3 4 5 →