The behavior of As precipitates in low-temperature-grown GaAs

被引：18
|
作者：
Bourgoin, JC
Khirouni, K
Stellmacher, M
机构：
[1] Univ Paris 07, CNRS, Phys Solides Grp, F-75251 Paris 05, France
[2] Fac Sci Monastir, Semicond Lab, Monastir 5000, Tunisia
[3] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 04期
关键词：
D O I：
10.1063/1.120781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We analyze the kinetics associated with the concentration and the growth of As precipitates during annealing in low-temperature-grown GaAs layers. We correlate them with that associated with the annealing of the As antisite related defect. This allows us to deduce that all those kinetics are governed by the mobility of the As interstitial whose migration energy is 0.44 eV. (C) 1998 American Institute of Physics.
引用
收藏
页码：442 / 444
页数：3
相关论文
共 50 条
  • [1] NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION
    VANRHEENEN, AD
    LIN, Y
    TEHRANI, S
    CHEN, CL
    SMITH, FW
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 82 - 85
  • [2] Role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and AlGaAs alloys
    Loukakos, PA
    Kalpouzos, C
    Perakis, IE
    Hatzopoulos, Z
    Sfendourakis, M
    Kostantinidis, G
    Fotakis, C
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9863 - 9868
  • [3] TUNNELING SPECTROSCOPY OF MIDGAP STATES INDUCED BY ARSENIC PRECIPITATES IN LOW-TEMPERATURE-GROWN GAAS
    FEENSTRA, RM
    VATERLAUS, A
    WOODALL, JM
    PETTIT, GD
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (18) : 2528 - 2530
  • [4] ROLE OF EXCESS AS IN LOW-TEMPERATURE-GROWN GAAS
    WARREN, AC
    WOODALL, JM
    KIRCHNER, PD
    YIN, X
    POLLAK, F
    MELLOCH, MR
    OTSUKA, N
    MAHALINGAM, K
    [J]. PHYSICAL REVIEW B, 1992, 46 (08): : 4617 - 4620
  • [5] Terahertz photomixing in low-temperature-grown GaAs
    Brown, ER
    Verghese, S
    McIntosh, KA
    [J]. ADVANCED TECHNOLOGY MMW, RADIO, AND TERAHERTZ TELESCOPES, 1998, 3357 : 132 - 142
  • [6] CORRELATION BETWEEN ARSENIC PRECIPITATES AND VACANCY-TYPE DEFECTS IN LOW-TEMPERATURE-GROWN GAAS
    HOZHABRI, N
    BAILEY, JB
    KOYMEN, AR
    SHARMA, SC
    ALAVI, K
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (31) : L455 - L460
  • [7] Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts
    Ueng, HJ
    Chen, NP
    Janes, DB
    Webb, KJ
    McInturff, DT
    Melloch, MR
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5637 - 5641
  • [8] Temperature dependence of the Fermi level in low-temperature-grown GaAs
    Chen, YH
    Yang, Z
    Wang, ZG
    Li, RG
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1866 - 1868
  • [9] DEFECTS AND ARSENIC DISTRIBUTION IN LOW-TEMPERATURE-GROWN GAAS
    HOZHABRI, N
    KOYMEN, AR
    SHARMA, SC
    ALAVI, K
    [J]. APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 311 - 314
  • [10] THERMAL-STABILITY OF LOW-TEMPERATURE-GROWN GAAS
    FAN, TW
    LIANG, JB
    DENG, HJ
    LI, RG
    WANG, ZG
    GEN, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 143 (3-4) : 354 - 358
12345