THERMAL-STABILITY OF LOW-TEMPERATURE-GROWN GAAS

被引：5
|
作者：
FAN, TW
LIANG, JB
DENG, HJ
LI, RG
WANG, ZG
GEN, W
机构：
[1] CHINESE ACAD SCI,SEMICOND MAT SCI LAB,BEIJING 100083,PEOPLES R CHINA
[2] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100083,PEOPLES R CHINA
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 143卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(94)90076-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The thermal stability of GaAs layers grown at low temperature by molecular beam epitaxy and subsequently annealed from 250 to 850 degrees has been investigated by transmission electron microscopy and Hall measurements. The results show that the formation of arsenic precipitates in annealed GaAs epilayers grown at low temperature and their crystallographical configuration are highly dependent on the temperature and duration of the annealing. Thermal annealing at 850 degrees for 30 min causes arsenic precipitates to become amorphous and some fraction of the arsenic precipitates to redissolve in the crystal matrix. An analysis of the dependence of resistivity on anneal temperature by Hall measurements gives an activation energy of about 1.6 eV for the formation of arsenic precipitates. Our results are discussed taking regard of the role electrically active paint defects during the precipitating process.
引用
收藏
页码：354 / 358
页数：5
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