Application of liftoff low-temperature-grown GaAs on transparent substrates for THz signal generation

被引：32
|
作者：
Heiliger, HM [1 ]
Vosseburger, M [1 ]
Roskos, HG [1 ]
Kurz, H [1 ]
Hey, R [1 ]
Ploog, K [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期
关键词：
D O I：
10.1063/1.117357
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial liftoff (ELO) of low-temperature-grown GaAs (LT-GaAs) is employed to fabricate (sub)picosecond photoconductive switches on optically transparent substrates for THz applications. Glass is selected as a substrate for on-wafer probes while sapphire is chosen for free-space antennas. (C) 1996 American Institute of Physics.
引用
收藏
页码：2903 / 2905
页数：3
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