Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

被引：0

作者：

G. B. Galiev

S. S. Pushkarev

A. M. Buriakov

V. R. Bilyk

E. D. Mishina

E. A. Klimov

I. S. Vasil’evskii

P. P. Maltsev

机构：

[1] Russian Academy of Sciences,Institute of Ultrahigh

[2] Moscow Technological University “MIREA”,Frequency Semiconductor Electronics

[3] National Research Nuclear University “MEPhI”,undefined

来源：

Semiconductors | 2017年 / 51卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

引用

页码：503 / 508

页数：5

共 50 条

[1] Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
Galiev, G. B.
Pushkarev, S. S.
Buriakov, A. M.
Bilyk, V. R.
Mishina, E. D.
Klimov, E. A.
Vasil'evskii, I. S.
Maltsev, P. P.
[J]. SEMICONDUCTORS, 2017, 51 (04) : 503 - 508
[2] Si-Doping of Low-Temperature-Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates
Klochkov, Aleksey Nikolaevich
Galiev, Galib Barievich
Klimov, Evgenyi Aleksandrovich
Pushkarev, Sergey Sergeevich
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (02):
[3] Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
G. B. Galiev
M. M. Grekhov
G. Kh. Kitaeva
E. A. Klimov
A. N. Klochkov
O. S. Kolentsova
V. V. Kornienko
K. A. Kuznetsov
P. P. Maltsev
S. S. Pushkarev
[J]. Semiconductors, 2017, 51 : 310 - 317
[4] Terahertz-Radiation Generation in Low-Temperature InGaAs Epitaxial Films on (100) and (411) InP Substrates
Galiev, G. B.
Grekhov, M. M.
Kitaeva, G. Kh.
Klimov, E. A.
Klochkov, A. N.
Kolentsova, O. S.
Kornienko, V. V.
Kuznetsov, K. A.
Maltsev, P. P.
Pushkarev, S. S.
[J]. SEMICONDUCTORS, 2017, 51 (03) : 310 - 317
[5] Terahertz photomixing in low-temperature-grown GaAs
Brown, ER
Verghese, S
McIntosh, KA
[J]. ADVANCED TECHNOLOGY MMW, RADIO, AND TERAHERTZ TELESCOPES, 1998, 3357 : 132 - 142
[6] Generation and detection of terahertz waves using low-temperature-grown GaAs with an annealing process
[J]. 1600, ETRI (36):
[7] Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process
Moon, Kiwon
Choi, Jeongyong
Shin, Jun-Hwan
Han, Sang-Pil
Ko, Hyunsung
Kim, Namje
Park, Jeong-Woo
Yoon, Young-Jong
Kang, Kwang-Yong
Ryu, Han-Cheol
Park, Kyung Hyun
[J]. ETRI JOURNAL, 2014, 36 (01) : 159 - 162
[8] SPECTROSCOPIC CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAAS EPITAXIAL-FILMS
TANI, M
SAKAI, K
ABE, H
NAKASHIMA, S
HARIMA, H
HANGYO, M
TOKUDA, Y
KANAMOTO, K
ABE, YJ
TSUKADA, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 4807 - 4811
[9] Terahertz wave generation with low-temperature-grown GaAs photoconductive antennas
Li, Tieyuan
Lou, Caiyun
Wang, Li
Huang, Jin
Zhao, Guozhong
Shi, Xiaoxi
[J]. Zhongguo Jiguang/Chinese Journal of Lasers, 2009, 36 (04): : 978 - 982
[10] Low-temperature-grown MBE GaAs for terahertz photomixers
Mikulics, M
Marso, M
Adam, R
Fox, A
Buca, D
Förster, A
Kordos, P
Xu, Y
Sobolewski, R
[J]. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 155 - 159

← 1 2 3 4 5 →