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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

被引：0
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作者：
G. B. Galiev
S. S. Pushkarev
A. M. Buriakov
V. R. Bilyk
E. D. Mishina
E. A. Klimov
I. S. Vasil’evskii
P. P. Maltsev
机构：
[1] Russian Academy of Sciences,Institute of Ultrahigh
[2] Moscow Technological University “MIREA”,Frequency Semiconductor Electronics
[3] National Research Nuclear University “MEPhI”,undefined
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
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页码：503 / 508
页数：5
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