Beryllium doped low-temperature-grown MBE GaAs:: material for photomixing in the THz frequency range

被引：0
|
作者：
Darmo, J [1 ]
Schäffer, F [1 ]
Förster, A [1 ]
Kordos, P [1 ]
机构：
[1] Max Planck Inst Radioastron, D-53010 Bonn, Germany
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889470
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Several topics related to the performances of a photoconductive mixer based oil low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure am discussed Relevant experimental data obtained for BE-doped GaAs are presented.
引用
收藏
页码：147 / 150
页数：4
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