Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

被引：0

作者：

Hiramoto, Toshiro ^{[1
]}

Tsutsui, Gen ^{[1
]}

Saitoh, Masurni ^{[1
]}

Nagumo, Toshiharu ^{[1
]}

Saraya, Takuya ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS | 2006年

关键词：

quantum confinement; phonon scattering; surface roughness scattering; volume inversion;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOVER Single-gate operation and double-gate operation are also compared Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.

引用

页码：44 / 55

页数：12

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