Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

被引：0
|
作者：
Hiramoto, Toshiro [1 ]
Tsutsui, Gen [1 ]
Saitoh, Masurni [1 ]
Nagumo, Toshiharu [1 ]
Saraya, Takuya [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS | 2006年
关键词：
quantum confinement; phonon scattering; surface roughness scattering; volume inversion;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOVER Single-gate operation and double-gate operation are also compared Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.
引用
收藏
页码：44 / 55
页数：12
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