Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

被引：1
|
作者：
Bavi, D. [1 ]
Brooks, B. [2 ]
Khandelwal, S. [1 ]
机构：
[1] Macquarie Univ, Sch Engn, Sydney, NSW, Australia
[2] Wolfspeed, Durham, NC USA
来源：
2021 21ST INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS (EE 2021) | 2021年
关键词：
SiC MOSFETs; SPICE models; Compact models; Temperature effects SiC;
D O I：
10.1109/Ee53374.2021.9628349
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 degrees C to 175 degrees C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 degrees C to 175 degrees C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.
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页数：4
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