Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

被引：1

作者：

Bavi, D. ^{[1
]}

Brooks, B. ^{[2
]}

Khandelwal, S. ^{[1
]}

机构：

[1] Macquarie Univ, Sch Engn, Sydney, NSW, Australia

[2] Wolfspeed, Durham, NC USA

来源：

2021 21ST INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS (EE 2021) | 2021年

关键词：

SiC MOSFETs; SPICE models; Compact models; Temperature effects SiC;

D O I：

10.1109/Ee53374.2021.9628349

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 degrees C to 175 degrees C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 degrees C to 175 degrees C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.

引用

页数：4

共 50 条

[31] Synthesis and Temperature Dependence of I-V Characteristic of Spin-Coated Nanostructured ZnO on P-Type Silicon
Eswar, K. A.
Husairi, F. S.
Mohamad, S. A.
Azlinda, A.
Rusop, M.
Abdullah, S.
2013 INTERNATIONAL CONFERENCE ON MANUFACTURING, OPTIMIZATION, INDUSTRIAL AND MATERIAL ENGINEERING (MOIME 2013), 2013, 46
[32] Photovoltaic Modeling: A Comprehensive Analysis of the I-V Characteristic Curve
Olayiwola, Tofopefun Nifise
Hyun, Seung-Ho
Choi, Sung-Jin
SUSTAINABILITY, 2024, 16 (01)
[33] Irradiance-dependence and translation of the I-V characteristics of crystalline silicon solar cells
Hishikawa, Y
Imura, Y
Oshiro, T
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 1464 - 1467
[34] Non ideal dark I-V curves behavior of silicon solar cells
Kaminski, A
Marchand, JJ
Laugier, A
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 51 (3-4) : 221 - 231
[35] PSPICE Modeling of Silicon Carbide MOSFETS and Device Parameter Extraction
Bilbao, Argenis
Bayne, Stephen
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE, 2012, : 776 - 779
[36] I-V silicon solar cell characteristic parameters temperature dependence. An experimental study using the standard deviation method
Veissid, N.
De Andrade, A.M.
Proceedings of the International Conference on Photovoltaic Solar Energy, 1991,
[37] Metal acetylacetonate domains grown on H-terminated porous silicon at room temperature and their specific I-V behavior
Chao, Jie
Wang, Hai-Tao
Xia, Bing
Liu, Hong-Bo
Xiao, Zhong-Dang
Xiao, Shou-Jun
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (48): : 24565 - 24570
[38] Continuous analytic I-V model for surrounding-gate MOSFETs
Jiménez, D
Iñíguez, B
Suñé, J
Marsal, LF
Pallarès, J
Roig, J
Flores, D
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) : 571 - 573
[39] I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
Panchenko, P.
Rybalka, S.
Malakhanov, A.
Krayushkina, E.
Radkov, A.
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
[40] TEMPERATURE-DEPENDENCE OF I-V AND C-V CHARACTERISTICS OF AL/CDTE SCHOTTKY DIODES
NABY, MA
RENEWABLE ENERGY, 1995, 6 (5-6) : 567 - 572

← 1 2 3 4 5 →