Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 degrees C to 175 degrees C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 degrees C to 175 degrees C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.