Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

被引：221

作者：

Singh, Priyanka ^{[1
]}

Singh, S. N. ^{[1
]}

Lal, M. ^{[1
]}

Husain, M. ^{[2
]}

机构：

[1] Natl Phys Lab, Div Elect Mat, New Delhi 110012, India

[2] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 12期

关键词：

Silicon solar cell; Series and shunt resistances; Temperature;

D O I：

10.1016/j.solmat.2008.07.010

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The temperature dependence of open-circuit voltage (V-oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V-oc with temperature (T) is controlled by the values of the band gap energy (E-g), shunt resistance (R-sh) and their rates of change with T We have found that R-sh decreases nearly linearly with T and its affect on dV(oc)/dT is significant for cells having smaller R-sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R-s and other parameters but also on the rate of change of R-s with voltage. The rate of decrease of R-s with voltage and Tare important to estimate the value of CF and its decrease with temperature accurately. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1611 / 1616

页数：6

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