Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

被引：221
|
作者：
Singh, Priyanka [1 ]
Singh, S. N. [1 ]
Lal, M. [1 ]
Husain, M. [2 ]
机构：
[1] Natl Phys Lab, Div Elect Mat, New Delhi 110012, India
[2] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 12期
关键词：
Silicon solar cell; Series and shunt resistances; Temperature;
D O I：
10.1016/j.solmat.2008.07.010
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The temperature dependence of open-circuit voltage (V-oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V-oc with temperature (T) is controlled by the values of the band gap energy (E-g), shunt resistance (R-sh) and their rates of change with T We have found that R-sh decreases nearly linearly with T and its affect on dV(oc)/dT is significant for cells having smaller R-sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R-s and other parameters but also on the rate of change of R-s with voltage. The rate of decrease of R-s with voltage and Tare important to estimate the value of CF and its decrease with temperature accurately. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1611 / 1616
页数：6
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