Role of Oxygen Vacancies on the Resistive Switching Characteristics of MIM Structures Fabricated a Low Temperature

被引：0

作者：

Molina-Reyes, J. ^{[1
]}

Valderrama-B, R. ^{[1
]}

机构：

[1] Natl Inst Astrophys Opt & Elect INAOE, Dept Elect, Puebla, Mexico

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

MIM structure; resistive switching; oxygen vacancies; BEOL; MECHANISMS; LAYER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a comparison in the resistive switching characteristics of MIM structures fabricated a low temperature having different concentration of oxygen vacancies. We find that, the forming voltage and conduction window of memory devices are improved by using a stack with oxygen-deficient/rich zones inside the dielectric. Then we propose a MIM structure that can be vertically integrated into a CMOS-based BEOL processing.

引用

页码：237 / 240

页数：4

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