Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

被引：16
|
作者：
Hu, P. [1 ]
Li, X. Y. [1 ]
Lu, J. Q. [1 ]
Yang, M. [1 ]
Lv, Q. B. [1 ]
Li, S. W. [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
来源：
PHYSICS LETTERS A | 2011年 / 375卷 / 18期
关键词：
Molecular beam epitaxy; Heterojunction; Bipolar resistive switching; Nonvolatile; Oxygen vacancy;
D O I：
10.1016/j.physleta.2011.03.033
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this Letter. bilayered Cu2O/CuO thin films were grown on Nb doped SrTiO3 (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current-voltage characteristics of Pt/Cu2O/CuO/Nb:STO devices show reproducible and pronounced current-voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current-voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1898 / 1902
页数：5
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