Resistive switching characteristics of sputtered AlN thin films

被引：18
|
作者：
Tseng, Zong-Liang [2 ]
Chen, Lung-Chien [2 ]
Li, Wan-Ying [1 ]
Chu, Sheng-Yuan [1 ,3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micro NanoSci & Technol, Tainan 70101, Taiwan
来源：
CERAMICS INTERNATIONAL | 2016年 / 42卷 / 08期
关键词：
AlN; Sputtering; Resistive random access memory (RRAM); Resistive switching;
D O I：
10.1016/j.ceramint.2016.03.022
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
AlN thin films were deposited on Pt/Ti/SiO2/Si substrates using a radio-frequency magnetron sputtering technique. The effect on the switch current-voltage characteristics of four different materials in the electrode fabricated on top of the AIN film was investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of the AIN thin films, respectively. The influence of film thickness and content on the resistive switching behavior was discussed. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and on/off current ratio. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：9496 / 9503
页数：8
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