Investigation of Resistive Switching in Thin Films of Copper Fluoride

被引：0
|
作者：
Evseev, Z. I. [1 ]
Popov, V. I. [1 ]
Timofeeva, T. E. [1 ]
Smagulova, S. A. [1 ]
机构：
[1] North Eastern Fed Univ, Yakutsk, Russia
来源：
2D SYSTEMS OF THE STRONG CORRELATED ELECTRONS: FROM FUNDAMENTAL RESEARCH TO PRACTICAL APPLICATIONS | 2018年 / 2041卷
基金：
俄罗斯科学基金会;
关键词：
D O I：
10.1063/1.5079340
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of copper fluoride on the ITO/Glass substrate were obatined using SF6 gas plasma synthesis. The resulting films were investigated using elemental analysis, scanning electron and atomic force microscopy. For the first time, a memristor effect was discovered in thin films of copper fluoride.
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页数：4
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