Role of Oxygen Vacancies on the Resistive Switching Characteristics of MIM Structures Fabricated a Low Temperature

被引：0
|
作者：
Molina-Reyes, J. [1 ]
Valderrama-B, R. [1 ]
机构：
[1] Natl Inst Astrophys Opt & Elect INAOE, Dept Elect, Puebla, Mexico
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
MIM structure; resistive switching; oxygen vacancies; BEOL; MECHANISMS; LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present a comparison in the resistive switching characteristics of MIM structures fabricated a low temperature having different concentration of oxygen vacancies. We find that, the forming voltage and conduction window of memory devices are improved by using a stack with oxygen-deficient/rich zones inside the dielectric. Then we propose a MIM structure that can be vertically integrated into a CMOS-based BEOL processing.
引用
收藏
页码：237 / 240
页数：4
相关论文
共 50 条
  • [1] Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
    Molina, Joel
    Torres, Reydezel
    Ranjan, Alok
    Pey, Kin-Leong
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 66 : 191 - 199
  • [2] The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories
    Zheng, Z. W.
    Hsu, H. H.
    Chen, P. C.
    Cheng, C. H.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (06) : 4431 - 4434
  • [3] Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
    Jaewook Lee
    Kun Yang
    Ju Young Kwon
    Ji Eun Kim
    Dong In Han
    Dong Hyun Lee
    Jung Ho Yoon
    Min Hyuk Park
    Nano Convergence, 10
  • [4] The role of oxygen vacancies on resistive switching properties of oxide materials
    Meng, Hang
    Huang, Shihao
    Jiang, Yifeng
    AIMS MATERIALS SCIENCE, 2020, 7 (05) : 665 - 683
  • [5] Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
    Lee, Jaewook
    Yang, Kun
    Kwon, Ju Young
    Kim, Ji Eun
    Han, Dong In
    Lee, Dong Hyun
    Yoon, Jung Ho
    Park, Min Hyuk
    NANO CONVERGENCE, 2023, 10 (01)
  • [6] Origin of oxygen vacancies in resistive switching memory devices
    Andreasson, B. P.
    Janousch, M.
    Staub, U.
    Meijer, G. I.
    Ramar, A.
    Krbanjevic, J.
    Schaeublin, R.
    14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS, 2009, 190
  • [7] Modulation of resistive switching characteristics for individual BaTiO3 microfiber by surface oxygen vacancies
    Miao, Zhilei
    Chen, Lei
    Zhou, Fang
    Wang, Qiang
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (02)
  • [8] Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory
    Park, Tae Hyung
    Kwon, Young Jae
    Kim, Hae Jin
    Woo, Hyo Cheon
    Kim, Gil Seop
    An, Cheol Hyun
    Kim, Yumin
    Kwon, Dae Eun
    Hwang, Cheol Seong
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (25) : 21445 - 21450
  • [9] The role of oxygen vacancies in resistive switching behavior of organic-TiO2 hybrid composite
    Jiahua Zhang
    Da Chen
    Shihua Huang
    Applied Physics A, 2017, 123
  • [10] The role of oxygen vacancies in resistive switching behavior of organic-TiO2 hybrid composite
    Zhang, Jiahua
    Chen, Da
    Huang, Shihua
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (10):
12345