Role of Oxygen Vacancies on the Resistive Switching Characteristics of MIM Structures Fabricated a Low Temperature

被引：0
|
作者：
Molina-Reyes, J. [1 ]
Valderrama-B, R. [1 ]
机构：
[1] Natl Inst Astrophys Opt & Elect INAOE, Dept Elect, Puebla, Mexico
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
MIM structure; resistive switching; oxygen vacancies; BEOL; MECHANISMS; LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present a comparison in the resistive switching characteristics of MIM structures fabricated a low temperature having different concentration of oxygen vacancies. We find that, the forming voltage and conduction window of memory devices are improved by using a stack with oxygen-deficient/rich zones inside the dielectric. Then we propose a MIM structure that can be vertically integrated into a CMOS-based BEOL processing.
引用
收藏
页码：237 / 240
页数：4
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