Capacitor over bitline (COB) DRAM cell and its contributions to high density DRAMs

被引：1
|
作者：
Kimura, Shin'ichiro [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | 2008年
关键词：
D O I：
10.1109/VTSA.2008.4530807
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The capacitor over bitline (COB) cell has significantly contributed to the increase of DRAM density. A simple idea of making capacitors over bitlines changed the memory cell structure and fabrication steps, and enabled the cell to maintain sufficient storage capacitance in ever decreasing memory cell. The COB cell has been proved to be the most suitable DRAM cell structure for this decade. In this presentation, I would like to review the COB cell development and its contributions to the high density DRAMs. Outlook on future cell structures based on the COB cell will also be discussed.
引用
收藏
页码：79 / 80
页数：2
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