Fully Depleted Double-Gate 1T-DRAM Cell with NVM Function for High Performance and High Density Embedded DRAM

被引：0
|
作者：
Park, Ki-Heung [1 ]
Kim, Young Min [1 ]
Kwon, Hyuck-In [2 ]
Kong, Seong Ho [1 ]
Lee, Jong-Ho [1 ]
机构：
[1] Kyungpook Natl Univ, Sch EECS, 1370 Sankyuk Dong, Taegu 702701, South Korea
[2] Daegu Univ, Sch Elect Engn, Taegu 712741, South Korea
来源：
2009 IEEE INTERNATIONAL MEMORY WORKSHOP | 2009年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
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页码：32 / +
页数：2
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