Vertical Double-Gate Structure with Nonvolatile Charge Storage Node for 1T-DRAM Cell Device

被引：0
|
作者：
Jeong, Min-Kyu [1 ]
Park, Ki-Heung [1 ]
Kwon, Hyuck-In [2 ]
Kong, Sung-Ho [1 ]
Lee, Jong-Ho [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
[2] Daegu Univ, Sch Elect Engn, Gyeongbuk, South Korea
来源：
2008 IEEE SILICON NANOELECTRONICS WORKSHOP | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：201 / +
页数：2
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