Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

被引：30
|
作者：
Pan, R. K. [1 ]
Zhang, T. J. [1 ]
Wang, J. Y. [1 ]
Wang, J. Z. [1 ]
Wang, D. F. [1 ,2 ,3 ]
Duan, M. G. [1 ]
机构：
[1] Hubei Univ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China
[2] Hanyang Univ, Q Psi, Seoul 133791, South Korea
[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Barium titanate; Resistive switching; Thin films; Conduction mechanism; Sputtering; THIN-FILMS; BEHAVIOR;
D O I：
10.1016/j.tsf.2012.01.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 80-nm-thickness BaTiO3 (BT) thin film was prepared on the Pt/Ti/SiO2/Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO2/Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current-voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current-voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole-Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：4016 / 4020
页数：5
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