Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films

被引：52
|
作者：
Au, K. [1 ]
Gao, X. S. [1 ,2 ]
Wang, Juan [1 ]
Bao, Z. Y. [1 ]
Liu, J. M. [2 ]
Dai, J. Y. [1 ]
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Hong Kong, Hong Kong, Peoples R China
[2] S China Normal Univ, Inst Adv Mat, Guangzhou, Guangdong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 02期
关键词：
FERROELECTRIC CONTROL; PHYSICS;
D O I：
10.1063/1.4812219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ag nanoparticle (NP) embedded BaTiO3 (BTO) thin films on SrRuO3-coated SrTiO3 (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10(4), has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film. (C) 2013 AIP Publishing LLC.
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页数：4
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