Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

被引：3
|
作者：
Kim, D. H. [1 ]
Kim, D. K. [1 ]
Cho, J. U. [1 ]
Park, S. Y. [2 ]
Isogami, S. [3 ]
Tsunoda, M. [4 ]
Takahashi, M. [4 ]
Fullerton, E. E. [5 ]
Kim, Y. K. [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea
[3] Fukushima Natl Coll Technol, Dept Gen Educ, Iwaki, Fukushima 9708034, Japan
[4] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[5] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
BIAS-VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/1.4709738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738]
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    Ishibashi, Shota
    Seki, Takeshi
    Nozaki, Takayuki
    Kubota, Hitoshi
    Yakata, Satoshi
    Fukushima, Akio
    Yuasa, Shinji
    Maehara, Hiroki
    Tsunekawa, Koji
    Djayaprawira, David D.
    Suzuki, Yoshishige
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (07)
  • [42] Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer
    Noh, Su Jung
    Chun, Byong Sun
    Kim, Young Keun
    Wang, Tianxing
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [43] Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions
    Liu, Xiaoyong
    Zhang, Wenzhe
    Carter, Matthew J.
    Xiao, Gang
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [44] Annealing effects on structural and transport properties of rf-sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions
    Park, Chando
    Zhu, Jian-Gang
    Moneck, Matthew T.
    Peng, Yingguo
    Laughlin, David E.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [45] Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions
    Meng, H.
    Sbiaa, R.
    Wang, C. C.
    Lua, S. Y. H.
    Akhtar, M. A. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (10)
  • [46] Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions
    Aoki, Tatsuya
    Ando, Yasuo
    Watanabe, Daisuke
    Oogane, Mikihiko
    Miyazaki, Terunobu
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)
  • [47] Spin dependent transport in hybrid magnetic tunnel junctions
    Chun, SH
    Potashnik, SJ
    Ku, KC
    Schiffer, P
    Samarth, N
    [J]. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 131 - 134
  • [48] Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
    Worledge, D. C.
    Hu, G.
    Abraham, David W.
    Sun, J. Z.
    Trouilloud, P. L.
    Nowak, J.
    Brown, S.
    Gaidis, M. C.
    O'Sullivan, E. J.
    Robertazzi, R. P.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (02)
  • [49] Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
    Amiri, P. Khalili
    Zeng, Z. M.
    Langer, J.
    Zhao, H.
    Rowlands, G.
    Chen, Y. -J.
    Krivorotov, I. N.
    Wang, J. -P.
    Jiang, H. W.
    Katine, J. A.
    Huai, Y.
    Galatsis, K.
    Wang, K. L.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (11)
  • [50] Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction
    Yoshida, Chikako
    Kurasawa, Masaki
    Lee, Young Min
    Aoki, Masaki
    Sugiyama, Yoshihiro
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (11)
12345