Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

被引：3

作者：

Kim, D. H. ^{[1
]}

Kim, D. K. ^{[1
]}

Cho, J. U. ^{[1
]}

Park, S. Y. ^{[2
]}

Isogami, S. ^{[3
]}

Tsunoda, M. ^{[4
]}

Takahashi, M. ^{[4
]}

Fullerton, E. E. ^{[5
]}

Kim, Y. K. ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea

[3] Fukushima Natl Coll Technol, Dept Gen Educ, Iwaki, Fukushima 9708034, Japan

[4] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

[5] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

BIAS-VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1063/1.4709738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738]

引用

页数：4

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