Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction

被引：29

作者：

Yoshida, Chikako ^{[1
]}

Kurasawa, Masaki ^{[1
]}

Lee, Young Min ^{[1
]}

Aoki, Masaki ^{[1
]}

Sugiyama, Yoshihiro ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

关键词：

Cobalt compounds - Data storage equipment - Magnetic devices - Switching;

D O I：

10.1063/1.2898514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found that a magnetic tunnel junction (MTJ) shows two types of memory operation. One is spin torque switching, and the other is electric stress induced resistive switching (RS), which is observed in various metal oxides. A MTJ in RS operation exhibits a resistance ratio of greater than 100, an endurance of more than 400 cycles, and data retention in excess of 89 h at 85 degrees C, which is suitable for programable switch elements. The MTJ can operate as a programable switch, as well as a storage element, in a field programable gate array. (c) 2008 American Institute of Physics.

引用

页数：3

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