The dipolar interaction in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

被引：7
|
作者：
Tsai, C. C. [1 ]
Cheng, Chih-Wei [2 ]
Weng, Yi-Chien [2 ]
Chern, G. [2 ]
机构：
[1] Chang Jung Christian Univ, Dept Engn & Management Adv Technol, Tainan 71101, Taiwan
[2] Natl Chung Cheng Univ, Dept Phys, Chiayi 62102, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
关键词：
INTERLAYER; ANISOTROPY;
D O I：
10.1063/1.4864245
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrathin CoFeB/MgO/CoFeB system with perpendicular magnetic anisotropy is a promising candidate for the high density magnetic random access memory. However, a dipolar interaction between the CoFeB layers may introduce a minor loop shift (H-s) and causes uncertainty during the operation. In this report, we systematically studied the dipolar effect in these structures and found that the coupling may be either ferromagnetic or antiferromagnetic (15 Oe> Hs>-15 Oe) depending upon the CoFeB thickness (0.9-1.4 nm). A modified Fabry-Perot model, which accounts the Bloch wave interference, may explain the present observations of the dipolar effect in the perpendicular junctions of CoFeB/MgO/CoFeB. (C) 2014 AIP Publishing LLC.
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页数：3
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